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Multi-layer structure production of semiconductor materials with different mesh parameters comprises epitaxy of thin film on support substrate and adhesion on target substrate
Multi-layer structure production of semiconductor materials with different mesh parameters comprises epitaxy of thin film on support substrate and adhesion on target substrate
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机译:具有不同网格参数的半导体材料的多层结构生产包括支撑衬底上的薄膜外延和目标衬底上的附着力
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摘要
The production of a multi-layer structure of semiconductor materials comprises: (a) the production of a layer (110) incorporating a superficial thin film on a support substrate (100); (b) the creation of a fragilisation (sic) zone in the assembly (10) formed by the support substrate and the thin film deposited; (c) the adhesion of the assembly with a target substrate (20); (d) the detachment at the level of the fragilisation zone; and (e) the treatment of the surface of the structure thus obtained.
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