Monolithic high capacity capacitor production on monocrystalline silicon substrate comprises use of ferroelectric insulating material for integrated circuit chips

摘要

The production of a capacitor on a monocrystalline silicon substrate (10) comprises: (a) forming a layer of silicon dioxide (11, SiO2); (b) depositing and completely oxidizing a layer of titanium dioxide (12, TiO2); (c) depositing layer of platinum (13, Pt) with a thickness of 800-1200 Angstrom to constitute a first electrode of the capacitor, the platinum deposition being effected by spraying at a pressure of 1.5 x 10 power 5 and 360-600degreesC; (d) reheating under an oxidizing atmosphere at 650-800degreesC; (e) depositing and oxidizing a thin film of ferroelectric material, to constitute the inter-electrode insulation (14, PZTO); and (f) depositing a second conducting layer (15) to constitute a second electrode (FE) for the capacitor.