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Semiconductor device e.g. metal insulator semiconductor transistor has source/drain active layers that contacts with element isolation region at boundary forming obtuse angle or curve region
Semiconductor device e.g. metal insulator semiconductor transistor has source/drain active layers that contacts with element isolation region at boundary forming obtuse angle or curve region
The source/drain active layers (6c1,6d1) and element isolation region (5b) are incontact with each other at the boundary forming an obtuse angle or curve region.
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