Semiconductor device comprises monocrystalline diboride substrate, semiconductor stopper layer and nitride semiconductor layer, for light emitting and receiving and other electronic devices

摘要

A semiconductor device comprises: (a) a substrate made of a monocrystalline diboride; (b) a semiconductor stopper layer formed on the main surface of the substrate; and (c) a nitride semiconductor layer formed on the semiconductor stopper layer, incorporating one or several types of semiconductor nitrides. Independent claims are also included for the following: (a) the growth of a semiconductor nitride; and (b) the production of a semiconductor device.