首页> 外国专利> One time programmable memory cell evaluating method for semiconductor chip, involves producing signal indicating undetermined programming state when electrical characteristic lies between two threshold values

One time programmable memory cell evaluating method for semiconductor chip, involves producing signal indicating undetermined programming state when electrical characteristic lies between two threshold values

机译:一种用于半导体芯片的可编程存储器单元评估方法,涉及当电特性位于两个阈值之间时产生表示未确定编程状态的信号

摘要

The method involves determining an electrical characteristic of a cell. The determined characteristic is compared with a threshold value (A) and a threshold value (B). A signal that indicates an undetermined programming state is produced when the characteristic lies between the two threshold values. The cell is programmed so that the characteristic lies outside the interval lying between the two threshold values. An independent claim is also included for a device for evaluating a one time programmable memory cell.
机译:该方法涉及确定电池的电特性。将所确定的特性与阈值(A)和阈值(B)进行比较。当特性位于两个阈值之间时,会产生表示未确定编程状态的信号。对单元进行编程,以使特性位于两个阈值之间的间隔之外。还包括一种用于评估一次性可编程存储单元的设备的独立权利要求。

著录项

  • 公开/公告号FR2854488A1

    专利类型

  • 公开/公告日2004-11-05

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号FR20040003978

  • 发明设计人 JANKE MARCUS;

    申请日2004-04-16

  • 分类号G11C29/00;G11C17/16;

  • 国家 FR

  • 入库时间 2022-08-21 22:39:11

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