首页> 外国专利> METHOD FOR PRODUCING MESOPOROUS SILICA STRUCTURE, AND MESOPOROUS SILICA STRUCTURE AND LIQUID CRYSTAL ELEMENT HAVING THE SAME

METHOD FOR PRODUCING MESOPOROUS SILICA STRUCTURE, AND MESOPOROUS SILICA STRUCTURE AND LIQUID CRYSTAL ELEMENT HAVING THE SAME

机译:制备介孔二氧化硅结构的方法以及具有相同结构的介孔二氧化硅结构和液晶元素

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a mesoporous silica structure by which the mesoporous silica structure having high porosity and excellent mechanical strength can be produced at a low cost without removing a surfactant by firing a composite body at a high temperature after removing a solvent from the composite body as in a conventional method.;SOLUTION: The mesoporous silica structure is produced successively through (a) a step for forming the composite body by using a solution obtained by adding a surfactant to a silica sol solution, (b) a step for removing a solvent from the composite body, and (c) a step for decomposing and removing the surfactant by subjecting the composite body from which the solvent has been removed to plasma treatment. The plasma treatment is performed preferably in an oxygen atmosphere under a pressure condition of ≤10 Torr.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种介孔二氧化硅结构的制造方法,通过该方法可以低成本地生产具有高孔隙率和优异的机械强度的介孔二氧化硅结构,而无需通过在去除后通过在高温下烧结复合体来去除表面活性剂。解决方案:中孔二氧化硅结构是通过(a)通过使用将表面活性剂添加到硅溶胶溶液中而获得的溶液形成复合体的步骤连续制备的,(b )从复合体中除去溶剂的步骤,以及(c)通过对已经除去溶剂的复合体进行等离子体处理来分解和除去表面活性剂的步骤。等离子体处理优选在氧气气氛中在≤10Torr的压力条件下进行。版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005213061A

    专利类型

  • 公开/公告日2005-08-11

    原文格式PDF

  • 申请/专利权人 RICOH CO LTD;

    申请/专利号JP20040018706

  • 发明设计人 ARAUMI MAYUKA;FUJIMURA HIROSHI;

    申请日2004-01-27

  • 分类号C01B37/00;G02F1/1333;

  • 国家 JP

  • 入库时间 2022-08-21 22:37:17

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