THICKNESS MEASURING METHOD AND ITS INSTRUMENT, POLISHING RATE CALCULATING METHOD, AND CPM PROCESSING METHOD AND ITS APPARATUS

摘要

PROBLEM TO BE SOLVED: To obtain a polishing rate with high precision for a sample, which has unevenness on its surface, differs in size of the unevenness with the density of a wiring pattern and filming conditions, and varies in polishing rate, without conditioning a wafer.;SOLUTION: An embodiment of the present invention includes a detection spectral light waveform acquiring step of irradiating the sample which has an optically transparent film formed on its surface, with white light, detecting reflected light from the sample surface by the irradiation with the white light, and acquiring the detection spectral waveform of light of (0)th order of the reflected light, a model spectral waveform calculation step of calculating a model spectral waveform based upon an optical model for the sample having surface unevenness constituted by putting together a plurality of step parts differing in height while parameters consisting of the size of the unevenness of the surface, an area rate, and a film thickness are varied, and a fitting processing step of performing fitting processing between the model spectral waveform calculated in the model spectral waveform calculation step while the parameters are varied and the detection spectral waveform acquired in the detection spectrum waveform acquiring step and finding the size of the unevenness of the surface, area rate, and film thickness of the sample based upon the most matching parameters.;COPYRIGHT: (C)2005,JPO&NCIPI