首页> 外国专利> PROCESS FOR DEPOSITING SILICON FILM AND PROCESS FOR FABRICATING DEVICE USING SILICON FILM DEPOSITION PROCESS

PROCESS FOR DEPOSITING SILICON FILM AND PROCESS FOR FABRICATING DEVICE USING SILICON FILM DEPOSITION PROCESS

机译:硅膜沉积工艺和使用硅膜沉积工艺制造设备的工艺

摘要

PROBLEM TO BE SOLVED: To provide a process for depositing a silicon film using liquid silicon material at a low cost while enhancing uniformity of the silicon film, and also to provide a process for fabricating a device using the silicon film deposition process.;SOLUTION: In the process for depositing the silicon film on the surface of a substrate using liquid silicon material, the surface of the substrate is coated with the liquid silicon material and then irradiated with microwave thus forming the silicon film on the surface of the substrate. The process for fabricating the device uses that silicon film deposition process.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种在降低硅膜均匀性的同时,使用液态硅材料以低成本沉积硅膜的工艺,并提供一种利用硅膜沉积工艺制造器件的工艺。在使用液态硅材料在基板的表面上沉积硅膜的过程中,基板的表面涂覆有液态硅材料,然后用微波照射,从而在基板的表面上形成硅膜。器件的制造工艺采用的是硅膜沉积工艺。;版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005223138A

    专利类型

  • 公开/公告日2005-08-18

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20040029531

  • 发明设计人 AOKI TAKASHI;

    申请日2004-02-05

  • 分类号H01L21/208;

  • 国家 JP

  • 入库时间 2022-08-21 22:35:48

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