MANUFACTURING METHOD OF GROUP III NITRIDE CRYSTAL SUBSTRATE AND ETCHANT USED FOR THE SAME AND, GROUP III NITRIDE CRYSTAL SUBSTRATE AND SEMICONDUCTOR ELEMENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate with projections and recesses on the surface suppressed.;SOLUTION: In a process of performing surface treatment on the surface of a group III nitride crystal 11 having projections and recesses, such as pits, hillocks, facets or the like, the surface is brought into contact with a melt including at least one of an alkali metal and alkaline earth metal for meltback etching, or the melt is used for mechano-chemical polishing. Thereby, the group III nitride crystal substrate 17, with suppressed work distortion and work defects and superior planarity of surface, is manufactured. Moreover, a semiconductor element with high characteristics, for example, is obtained by using this group III nitride crystal substrate.;COPYRIGHT: (C)2005,JPO&NCIPI