METHOD, INSTRUMENT, AND PROGRAM FOR MEASURING CARRIER CONCENTRATION AND STRESS IN SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for spectroscopically finding carrier concentration and stress in a semiconductor device.;SOLUTION: According to this stress measuring method, a half-value width and a peak position of an emission spectrum are obtained in a portion under test of a specimen under test. The carrier concentration of the specimen under test is calculated from the half-value width of the mission spectrum of the specimen under test based on a relation between the half-value width of the emission spectrum and carrier concentration previously determined by means of a plurality of standard specimens different in carrier concentration having the same composition ratio as the specimen under test. The peak position of the mission spectrum of the standard specimen at the carrier concentration of the specimen under test is calculated from a relation between the peak position of the mission spectrum and the carrier concentration determined by means of a plurality of standard specimens different in carrier concentration having the same composition ratio as the specimen under test. A difference value (a peak position movement amount) is determined between the calculated peak position of the emission spectrum of the standard specimens and the measured peak position of the emission spectrum of the specimen under test. Stress acting on the portion under test is calculated from the movement amount and the stress sensitivity coefficient of the specimen under test.;COPYRIGHT: (C)2005,JPO&NCIPI