METHOD OF MANUFACTURING FLUORINE-DOPED OXIDE FILM, THE FLUORINE-DOPED OXIDE FILM OBTAINED WITH THE SAME METHOD, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiOF film which is improved further than that of the related art, in close contactness under the condition that change by aging of dielectric coefficient due to absorption of humidity is suppressed by using the SiH₄-based gas system.;SOLUTION: In the semiconductor device and the manufacturing method thereof, the fluorine-doped oxide film is used as an interlayer film. Moreover, such fluorine-doped oxide film is characterized in that the fluorine gas integrated intensity in terms of the boosted temperature elimination and degassification evaluation up to 1,000°C from 500°C is equal to 50 times or less the fluorine gas integrated intensity up to 500°C from 50°C, or hydrogen degassification intensity at 900°C in the hydrogen gas integrated intensity in terms of the boosted temperature elimination and degassification evaluation up to 1,000°C from 900°C is equal to 1/3 or less the hydrogen degassificaion intensity at 600°C.;COPYRIGHT: (C)2005,JPO&NCIPI