The present invention relates to a method of preparing a gallium nitride film having a low defect density by vapor phase epitaxy. The present invention relates to a method for producing a gallium nitride (GaN) layer from the substrate by vapor phase epitaxy deposition of gallium nitride. In the present invention, comprises the steps of vapor-phase epitaxial lateral overgrowth of one at least, prior to at least one of said vapor-phase epitaxial lateral overgrowth step, gallium nitride deposited on the dielectric mask deposited previously , dislocations are generated in the dislocation bending of the maximum number of, curved or by performing the etching of the hole to direct the substrate, to introduce asymmetry in the environment of transition between one of the epitaxial lateral overgrowth step results and characterized in that it does not appear on the surface of the gallium nitride layer formed as. The invention also relates to electronic components and photoelectrons produced from the gallium nitride film.
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