METHOD OF GROWING CRYSTAL, METHOD OF MANUFACTURING SEMICONDUCTOR LASER, AND CRYSTAL GROWING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of growing crystal by which crystalline compound semiconductor films having good crystal qualities can be formed in different thicknesses in the same substrate.;SOLUTION: The method of growing crystal includes a step of mounting a given substrate 60 on a substrate mounting member 50 housed in a deposition chamber 10, and a step of growing compound semiconductor crystals on the substrate 60 while the substrate 60 is heated in the deposition chamber 10. The substrate mounting member 50 is provided with a temperature distribution imparting area 52 on its surface for mounting the substrate 60. The compound semiconductor crystals are grown on the crystal growing surface of the substrate 60 while a prescribed temperature distribution is produced on the surface by heating the substrate 60 through the temperature distribution imparting area 52.;COPYRIGHT: (C)2005,JPO&NCIPI