INTEGRATION OF HIGH PERFORMANCE COPPER INDUCTOR WITH BOND PAD

摘要

PPROBLEM TO BE SOLVED: To integrate high performance copper inductors with global interconnects, and with either Al bond pads or Cu bond pads. PSOLUTION: The integration of high performance copper inductors are conducted wherein a tall, Cu laminate spiral inductor is formed at the last metal level, and at the last metal + 1 level, with the metal levels interconnected by a bar via having the same spiral shape as the spiral metal inductors at the last metal level and the last metal + 1 level. The invention provides methods for integrating the formation of thick inductors with the formation of bond pads, terminals and interconnect wiring with the last metal + 1 wiring. The subject invention uses the dielectric deposition, spacer formation, and/or selective deposition of a passivating metal such as CoWP, to passivate a Cu inductor that is formed after the last metal layer. PCOPYRIGHT: (C)2005,JPO&NCIPI