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METHOD OF MANUFACTURING THIN FILM RESONATOR, AND APPARATUS OF ETCHING THIN FILM RESONATOR

机译:薄膜谐振器的制造方法及薄膜谐振器的制造装置

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film resonator by which a desired resonance frequency can be obtained with high accuracy.;SOLUTION: A piezoelectric resonance section 9, in which an upper electrode film 1 and a lower electrode film 2 are formed on both sides of a piezoelectric film 3, is formed on a front side of a Si substrate. Thereafter, etching by a laser beam 11 is carried out to form a cavity part 20. In this case, the etching by the laser beam 11 is carried out by making a detection probe 15 in contact with the upper electrode film 1 and the lower electrode film 2 to monitor the resonance frequency of the thin film resonator and when the resonance frequency is almost coincident with a setting frequency, the etching by the laser beam 11 is completed.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种制造薄膜谐振器的方法,通过该方法可以高精度地获得所需的谐振频率。解决方案:压电谐振部分9,其中上电极膜1和下电极膜2在压电体膜3的两面上形成有硅,在硅基板的表面上形成有硅。之后,通过激光束11进行蚀刻以形成腔部20。在这种情况下,通过使检测探针15与上电极膜1和下电极接触来进行激光11的蚀刻。膜2以监视薄膜谐振器的谐振频率,并且当谐振频率几乎与设定频率一致时,激光束11的蚀刻完成。;版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005244486A

    专利类型

  • 公开/公告日2005-09-08

    原文格式PDF

  • 申请/专利权人 JAPAN RADIO CO LTD;

    申请/专利号JP20040050139

  • 发明设计人 YAMAZAKI HAJIME;

    申请日2004-02-25

  • 分类号H03H3/04;H03H9/17;

  • 国家 JP

  • 入库时间 2022-08-21 22:30:31

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