首页> 外文会议>Symposium on Design, Test, Integration Packaging of MEMS and MOEMS >Patterning PZT Thin Films using Reactive Ion Beam Etching for PiezoMEMS, RF MEMS Resonator and Filter Applications
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Patterning PZT Thin Films using Reactive Ion Beam Etching for PiezoMEMS, RF MEMS Resonator and Filter Applications

机译:使用反应离子束蚀刻在PiezoMEMS,RF MEMS谐振器和滤波器应用中对PZT薄膜进行图案化

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Thin film PZT exhibits several advantages for fabricating PiezoMEMS, RF MEMS resonators and filters due to its high electromechanical coupling factors. However, patterning PZT thin films still remain as a challenge. Traditional patterning techniques like ICP/RIE results in poor selectivity to Pt electrode and photoresist mask, rough etched surface and redeposition on the sidewall (fencing). The sidewall redeposition results in leaks between the bottom and top electrodes. This paper reports the reactive ion beam etching (RIBE) of PZT with smooth surface, nearly vertical profile angle, no redeposition on the sidewall and high selectivity to Pt electrode and photoresist mask.
机译:薄膜PZT的机电耦合系数高,因此在制造PiezoMEMS,RF MEMS谐振器和滤波器方面显示出许多优势。但是,图案化PZT薄膜仍然是一个挑战。传统的图案化技术(如ICP / RIE)导致对Pt电极和光致抗蚀剂掩模的选择性差,蚀刻的表面粗糙以及在侧壁上重新沉积(栅栏)。侧壁再沉积导致底部电极和顶部电极之间的泄漏。本文报道了PZT的反应离子束刻蚀(RIBE),其表面光滑,接近垂直轮廓角,在侧壁上没有重新沉积并且对Pt电极和光刻胶掩模具有很高的选择性。

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