MAGNETORESISTANCE EFFECT ELEMENT, DEVICE HAVING MAGNETORESISTANCE EFFECT ELEMENT, DEVICE COMPRISING NANOCONTACT STRUCTURE, AND MANUFACTURING METHOD OF NANO CONTACT STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element capable of stably obtaining very high changes in resistance, and to provide its manufacturing method.;SOLUTION: The magnetoresistance effect element 10 comprises an antiferromagnetism layer 13, a pin layer 12, combined with this antiferromagnetism layer 13 in switched connection, a free layer 14 in which magnetism is rotated or switched by magnetic field of medium, and an interlayer 20 between the free layer and the pin layer 12. The interlayer 20 comprises magnetism particles 16, surrounded by an insulating body 18. Further, these magnetism particles 16 have the free layer 14 and the pin layer 12 connected in nano contact.;COPYRIGHT: (C)2005,JPO&NCIPI