首页> 外国专利> LITHOGRAPHIC MASK LAYOUT DEVELOPING METHOD, LITHOGRAPHIC MASK LAYOUT DEVELOPING APPARATUS, AND COMPUTER-READABLE MEDIUM CONTAINING ONE OR MORE SEQUENCES OF ONE OR MORE COMMANDS FOR EXECUTING METHOD OF DEVELOPING LITHOGRAPHIC MASK LAYOUT

LITHOGRAPHIC MASK LAYOUT DEVELOPING METHOD, LITHOGRAPHIC MASK LAYOUT DEVELOPING APPARATUS, AND COMPUTER-READABLE MEDIUM CONTAINING ONE OR MORE SEQUENCES OF ONE OR MORE COMMANDS FOR EXECUTING METHOD OF DEVELOPING LITHOGRAPHIC MASK LAYOUT

机译:光刻术布局设计方法,光刻术布局设计设备以及包含一个或多个命令的计算机可读介质,用于执行光刻术布局设计的一种或多种命令

摘要

PPROBLEM TO BE SOLVED: To provide a method and system for producing various patterns for a maskless lithographic system, and more particularly, to provide a technique for maskless lithography to print lines branched at a variety of pitches, and to use mirror arrays of a fixed size for contacting holes. PSOLUTION: This method for developing lithographic maskless layout generates an ideal mask layout, representative of the image characteristics associated with a desired image, and produces an equivalent mirror-based mask layout in accordance with an average intensity of the ideal mask layout. PCOPYRIGHT: (C)2005,JPO&NCIPI
机译:

要解决的问题:提供一种为无掩模光刻系统产生各种图案的方法和系统,更具体地说,提供一种无掩模光刻技术以印刷以各种节距分支的线并使用反射镜阵列固定尺寸的孔。

解决方案:这种用于开发无光刻版无掩模版图的方法可生成代表与所需图像相关的图像特性的理想掩模版图,并根据理想掩模版图的平均强度生成等效的基于镜像的掩模版图。

版权:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2004343127A

    专利类型

  • 公开/公告日2004-12-02

    原文格式PDF

  • 申请/专利权人 ASML HOLDING NV;

    申请/专利号JP20040146979

  • 发明设计人 BABA-ALI NABILA;

    申请日2004-05-17

  • 分类号H01L21/027;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-21 22:29:57

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