CHEMICAL MECHANICAL POLISHING SLURRY FOR ORGANIC FILM, METHOD OF CHEMICALLY/MECHANICALLY POLISHING ORGANIC FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of polishing an organic film, such as a resist film or the like, stably in a short time, restraining a dishing phenomenon from occurring in the film so as to keep its surface superior.;SOLUTION: The method is to chemically and mechanically polish the organic film deposited on a semiconductor substrate. The method is characterised by being provided with the processes of making the semiconductor substrate (32) with the organic film deposited thereon bear against a polishing cloth (31) which is pasted on a turntable (30) and has a compressive modulus of 100 to 600 MPA, while the semiconductor substrate (32) with the organic film is rotated at a relative speed of 0.17 to 1.06 m/sec to the polishing cloth (31); and feeding a polishing slurry (37) which has functional groups selected out of anion, cation, amphoteric, and non-ion functional groups, contains resin particles which are 0.05 to 5 μm in primary particle diameter, and has a pH of 2 to 8, onto the polishing cloth (31) to polish the organic film.;COPYRIGHT: (C)2005,JPO&NCIPI