METHOD AND PROGRAM FOR CORRECTING FIGURE OF PHOTOMASK, RECORDING MEDIUM HAVING THE PROGRAM RECORDED THEREON, APPARATUS AND METHOD FOR FORMING PHOTOMASK PATTERN, PHOTOMASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To correct the figure of a photomask on the basis of the reference data relating to the deviation of a pattern dimension and to decrease fluctuation in the pattern dimension which much influences device characteristics.;SOLUTION: When the deviation of a pattern dimension is determined by subtracting the pattern dimension of a designed pattern in a processed layer of a semiconductor wafer from the pattern dimension of a real transfer pattern of the semiconductor wafer transferred by using a photomask, the relationship between the deviation of the pattern dimension and the pattern spacing between the designed pattern and adjacent patterns in either side of the designed pattern in the width direction is measured so as to obtain reference data. Whether the deviation of the pattern dimension is equal to or higher than the upper limit F_H or equal to or lower than the lower limit F_L is judged by using the reference data. In a region where the pattern dimension is judged as out of the above limit, the figure data of the photomask are corrected. A photomask pattern is formed on the basis of the corrected figure data, and the obtained photomask is used to form a pattern in the layer to be processed of a semiconductor integrated circuit device.;COPYRIGHT: (C)2005,JPO&NCIPI