首页> 外国专利> TANTALUM HYDROXIDE, NIOBIUM HYDROXIDE, TANTALUM OXIDE, NIOBIUM OXIDE, AND METHODS FOR PRODUCING THEM

TANTALUM HYDROXIDE, NIOBIUM HYDROXIDE, TANTALUM OXIDE, NIOBIUM OXIDE, AND METHODS FOR PRODUCING THEM

机译:氢氧化钽,氢氧化铌,氧化钽,氧化铌及其制备方法

摘要

PROBLEM TO BE SOLVED: To provide an oxide or hydroxide of tantalum or niobium capable of being uniformly dispersed by mixing.;SOLUTION: The method for producing the hydroxide comprises mixing a tantalum fluoride solution or a niobium fluoride solution with a precipitant (e.g. ammonia water), separating and washing the formed precipitate, subjecting the obtained precipitate to a steam-containing gas treatment including keeping it in a steam-containing gas atmosphere at 50 to 300°C for at least 0.5 hr, and drying the product obtained by the treatment to an ignition loss equal to 20 to 90% of the theoretical ignition loss. Thus, it is possible to produce the hydroxide or oxide of tantalum or niobium capable of being uniformly dispersed by mixing and desirable as e.g. a raw material for electronic ceramic elements.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供能够通过混合而均匀分散的钽或铌的氧化物或氢氧化物;解决方案:生产氢氧化物的方法包括将氟化钽溶液或氟化铌溶液与沉淀剂(例如氨水)混合),分离并洗涤形成的沉淀物,将获得的沉淀物进行含蒸汽的气体处理,包括将其在50-300℃的含蒸汽的气体气氛中保持至少0.5小时,并干燥通过处理获得的产物。到等于理论点火损失的20%至90%的点火损失。因此,可以生产能够通过混合而均匀地分散的钽或铌的氢氧化物或氧化物,并且例如优选地为钽,铌的氢氧化物或氧化物。电子陶瓷元件的原材料。;版权所有:(C)2005,日本特许厅

著录项

  • 公开/公告号JP2005001920A

    专利类型

  • 公开/公告日2005-01-06

    原文格式PDF

  • 申请/专利权人 MITSUI MINING & SMELTING CO LTD;

    申请/专利号JP20030165655

  • 发明设计人 AZUMA KENJI;ISAKA HIROMICHI;

    申请日2003-06-10

  • 分类号C01G33/00;C01G35/00;C04B35/626;

  • 国家 JP

  • 入库时间 2022-08-21 22:28:14

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号