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The parallel bit test circuit which shares the output driver parallel bit test manner, and its semiconductor memory device null large number which use

机译:具有输出驱动器并行位测试方式的并行位测试电路及其使用的半导体存储器件为零

摘要

Integrated circuit memory device testing circuits and methods compare data on a selected number of the data line outputs of a memory cell array to one another to produce comparison results, in response to a selection signal that indicates the selected number of the data line outputs to be compared to one another. A shared test driver is responsive to the comparison circuit to provide the comparison results to an associated global output line for at least two values of the selection signal that indicate at least two selected numbers of data line outputs to be compared to one another. By sharing test drivers, separate test drivers need not be provided for each selected number of the data line outputs that are compared to one another. The number of test drivers may therefore be reduced so that the area occupied by the testing circuits may be reduced.
机译:集成电路存储装置测试电路和方法响应于指示要选择的数据线输出的选定数量的数据的选择信号,彼此比较存储单元阵列的数据线输出的选定数量上的数据以产生比较结果。彼此相比。共享的测试驱动器响应于比较电路,以将针对选择信号的至少两个值的比较结果提供给相关联的全局输出线,该至少两个值指示至少两个选定数量的数据线输出要相互比较。通过共享测试驱动器,不需要为相互比较的每个选定数量的数据线输出提供单独的测试驱动器。因此可以减少测试驱动器的数量,从而可以减少测试电路占用的面积。

著录项

  • 公开/公告号JP3661979B2

    专利类型

  • 公开/公告日2005-06-22

    原文格式PDF

  • 申请/专利权人 三星電子株式会社;

    申请/专利号JP19990074520

  • 发明设计人 金炳▲チュル▼;

    申请日1999-03-18

  • 分类号G11C29/00;G01R31/28;

  • 国家 JP

  • 入库时间 2022-08-21 22:28:13

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