Transistor metal gate structure and the production method of designating the influence of non even characteristic as minimum

摘要

Metal gate structure (10), the gate groove (19) the gate dielectric (22), the gate electrode (24), stop layer (26) and metal layer (28) it makes accumulate inside, it is formed the gate groove (19) by removing the part of those layers which exist outside. Using 1st grinding or etching process, stop layer (26) selective metal layer (28) it removes the part. After the 1st grinding or the etching process, using 2nd grinding or etching process, the gate groove (19) the gate dielectric which exists outside (22), the gate electrode (24), stop layer (26) and metal layer (28) it removes the part. As a result the structure which is obtained metal gate structure (10) increases the uniformity and even characteristic of the upper surface.