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With the separable insulating formation burial on land in the hole of the converse T letter condition which
With the separable insulating formation burial on land in the hole of the converse T letter condition which
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机译:与可分离的绝缘地层埋在陆上的反T字孔中
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摘要
A semiconductor device having a silicon-on-insulator (SOI) structure includes a lower silicon substrate and an upper silicon pattern electrically insulated from the lower silicon pattern by an isolating insulation layer buried by a reverse T-type hole formed in the lower silicon substrate. A gate insulation layer and a gate electrode are formed over the upper silicon pattern, and source/drain regions are formed in the upper silicon pattern centered around the gate electrode. Also, a channel region is disposed between the source/drain region. A silicon layer or a porous silicon layer is formed under the channel region for electrically connecting the lower silicon substrate and the upper silicon pattern. A body contact, which is the same as that of a general semiconductor device, is thus allowed without a special change in the design of the semiconductor device.
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