The first semiconductor region (12, 13, 3, 4 and 20) where

摘要

PURPOSE: To provide a multifunction electronic part, especially a negative dynamic resistance element of an extremely miniaturized integrated structure which requires only a small number of masks for manufacturing, and its manufacturing method and a use method. ;CONSTITUTION: The electronic part contains first semiconductor regions 12, 13, 3, 4, 20 which are incorporated in the same semiconductor structure phasically and can form an insulation gate field-effect transistor and second semiconductor regions 12, 20, 18, 19, 11 which can form a lateral bipolar transistor. The two regions have a common semiconductor layer 20 and a channel of a field-effect transistor can be formed inside it, a base current of a bipolar transistor can flow, and a structure wherein the two regions can show negative dynamic resistance together can be formed.;COPYRIGHT: (C)1994,JPO