首页> 外国专利> Method for producing plate silicon, substrate for producing plate silicon, plate silicon, solar cell using the plate silicon, and solar cell module

Method for producing plate silicon, substrate for producing plate silicon, plate silicon, solar cell using the plate silicon, and solar cell module

机译:平板硅的制造方法,平板硅的制造基板,平板硅,使用该平板硅的太阳能电池以及太阳能电池模块

摘要

In order to increase the demand for solar cells, the present invention reduces the plate-like silicon (11, 31) having through holes (13A) and notches (31B) without going through a process such as laser processing or machining. The purpose is to provide at a cost. Further, by using the obtained plate-like silicon (11, 31), a highly transmissive (see-through) solar cell, solar cell module, emitter-wrap-through solar cell, or solar cell module having a high design property It is intended to provide at a low price. For this reason, the plate-like silicon manufacturing method of the present invention is a plate-like silicon manufacturing method in which a substrate is brought into contact with a silicon melt and silicon is crystal-grown on the substrate surface. ) Is grown, and a through hole (13A) and / or a notch (31B) is formed in the plate-like silicon (11, 31).
机译:为了增加对太阳能电池的需求,本发明减少了具有通孔(13A)和切口(31B)的板状硅(11、31),而无需经过诸如激光加工或机械加工的工艺。目的是要付出一定的代价。另外,通过使用得到的板状硅(11、31),可以得到高透射率的(透明的)太阳能电池,太阳能电池模块,发射极卷绕型太阳能电池或设计性高的太阳能电池模块。旨在以低价提供。因此,本发明的板状硅的制造方法是使基板与硅熔液接触并使硅在该基板表面上结晶生长的板状硅的制造方法。 ),在板状硅(11、31)上形成通孔(13A)和/或缺口(31B)。

著录项

  • 公开/公告号JPWO2003072500A1

    专利类型

  • 公开/公告日2005-06-16

    原文格式PDF

  • 申请/专利权人 シャープ株式会社;

    申请/专利号JP20030571211

  • 发明设计人 大石 隆一;佃 至弘;

    申请日2003-02-24

  • 分类号H01L31/04;C01B33/02;

  • 国家 JP

  • 入库时间 2022-08-21 22:26:49

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