首页> 外国专利> PLATE-SHAPED SILICON MANUFACTURING METHOD, SUBSTRATE FOR MANUFACTURING PLATE-SHAPED SILICON, PLATE-SHAPED SILICON, SOLAR CELL USING THE PLATE-SHAPED SILICON, AND SOLAR CELL MODULE

PLATE-SHAPED SILICON MANUFACTURING METHOD, SUBSTRATE FOR MANUFACTURING PLATE-SHAPED SILICON, PLATE-SHAPED SILICON, SOLAR CELL USING THE PLATE-SHAPED SILICON, AND SOLAR CELL MODULE

机译:板状硅制造方法,用于制造板状硅的基质,板状硅,使用板状硅的太阳能电池和太阳能电池模块

摘要

A plate-shaped silicon (11, 31) having a through hole (13A) and a cut-out portion (31B) without executing processings such as laser machining and machining is provided low cost so as to increase the demand for solar cells. Using the produced plate-shaped silicon (11, 31), a high-designability transparent (see-through) solar cell, a solar cell module, and an emitter wrap through solar cell are provided at low cost. A method for manufacturing a plate-shaped silicon by bringing a substrate into contact with a silicon melt and growing a crystal of plate-shaped silicon on the substrate is characterized by comprising a step of forming a through hole (13A) and/or a cut-out portion (31B) in the plate-shaped silicon (11, 31) while growing a crystal of a plate-shaped silicon on the substrate.
机译:提供具有通孔(13A)和切口部分(31B)而无需执行诸如激光机加工和机加工的处理的板状硅(11、31)的低成本,从而增加了对太阳能电池的需求。使用所制造的板状硅(11、31),能够以低成本提供高设计性的透明(透视)太阳能电池,太阳能电池模块以及发射极卷绕式太阳能电池。通过使基板与硅熔体接触并在基板上生长板状硅的晶体来制造板状硅的方法,其特征在于包括形成通孔(13A)和/或切口的步骤。在基板上生长板状硅的晶体的同时,在板状硅(11、31)中形成-部分(31B)。

著录项

  • 公开/公告号AU2003211282A1

    专利类型

  • 公开/公告日2003-09-09

    原文格式PDF

  • 申请/专利权人 SHARP KABUSHIKI KAISHA;

    申请/专利号AU20030211282

  • 发明设计人 RYUICHI OISHI;YOSHIHIRO TSUKUDA;

    申请日2003-02-24

  • 分类号C01B33/02;H01L31/04;

  • 国家 AU

  • 入库时间 2022-08-21 23:57:06

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