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Method for producing plate silicon, substrate for producing plate silicon, plate silicon, solar cell using the plate silicon, and solar cell module

机译:平板硅的制造方法,平板硅的制造基板,平板硅,使用该平板硅的太阳能电池以及太阳能电池模块

摘要

A plate-shaped silicon (11, 31) having a through hole (13A) and a cut-out portion (31B) without executing processings such as laser machining and machining is provided low cost so as to increase the demand for solar cells. Using the produced plate-shaped silicon (11, 31), a high-designability transparent (see-through) solar cell, a solar cell module, and an emitter wrap through solar cell are provided at low cost. A method for manufacturing a plate-shaped silicon by bringing a substrate into contact with a silicon melt and growing a crystal of plate-shaped silicon on the substrate is characterized by comprising a step of forming a through hole (13A) and/or a cut-out portion (31B) in the plate-shaped silicon (11, 31) while growing a crystal of a plate-shaped silicon on the substrate.
机译:提供具有通孔(13A)和切口部分(31B)而无需执行诸如激光机加工和机加工的处理的板状硅(11、31)的低成本,从而增加了对太阳能电池的需求。使用生产的板状硅(11、31),以低成本提供了高设计性的透明(透视)太阳能电池,太阳能电池模块和发射极包裹式太阳能电池。通过使基板与硅熔体接触并在基板上生长板状硅的晶体来制造板状硅的方法,其特征在于包括形成通孔(13A)和/或切口的步骤。在基板上生长板状硅的晶体的同时,在板状硅(11、31)中形成-部分(31B)。

著录项

  • 公开/公告号JP4242294B2

    专利类型

  • 公开/公告日2009-03-25

    原文格式PDF

  • 申请/专利权人 シャープ株式会社;

    申请/专利号JP20030571211

  • 发明设计人 大石 隆一;佃 至弘;

    申请日2003-02-24

  • 分类号C01B33/02;H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-21 19:38:50

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