首页> 外国专利> Substrate for an organic field effect transistor, use of said substrate, method for increasing the charge carrier mobility, and organic field effect transistor (ofet)

Substrate for an organic field effect transistor, use of said substrate, method for increasing the charge carrier mobility, and organic field effect transistor (ofet)

机译:用于有机场效应晶体管的衬底,所述衬底的用途,用于增加电荷载流子迁移率的方法以及有机场效应晶体管(ofet)

摘要

An organic field effect transistor includes a well-ordered substrate layer on which organic functional material is deposited. A method of increasing the charge carrier mobility of the organic field effect transistor substrate layer is achieved by depositing onto the substrate an organic functional material, the substrate being in the form of a well-ordered layer. The method and transistor include using a well-ordered plastics film as the substrate layer.
机译:有机场效应晶体管包括排列有序的衬底层,有机功能材料沉积在该衬底层上。一种增加有机场效应晶体管衬底层的电荷载流子迁移率的方法是通过将有机功能材料沉积到衬底上来实现的,该衬底为有序层的形式。该方法和晶体管包括使用排列良好的塑料膜作为衬底层。

著录项

  • 公开/公告号US2005224787A1

    专利类型

  • 公开/公告日2005-10-13

    原文格式PDF

  • 申请/专利权人 WOLFGANG CLEMENS;

    申请/专利号US20050517750

  • 发明设计人 WOLFGANG CLEMENS;

    申请日2003-06-06

  • 分类号H01L35/24;

  • 国家 US

  • 入库时间 2022-08-21 22:25:59

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