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Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxide

机译:通过用超临界二氧化碳去除牺牲材料来形成互连结构

摘要

An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer comprising a porous matrix, as well as a porogen in certain variations, is formed adjacent a sacrificial dielectric layer. Subsequent to other processing treatments, a portion of the sacrificial dielectric layer is decomposed and removed through a portion of the porous matrix using supercritical carbon dioxide leaving voids in positions previously occupied by portions of the sacrificial dielectric layer. The resultant structure has a desirably low k value as a result of the voids and materials comprising the porous matrix and other structures. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.
机译:公开了一种层间电介质结构及其制造方法。邻近牺牲介电层形成包括多孔基质以及某些变化的致孔剂的复合介电层。在其他处理处理之后,使用超临界二氧化碳分解并通过一部分多孔基质分解牺牲介电层,并在先前被牺牲介电层的一部分占据的位置中留下空隙。由于空隙和包含多孔基质和其他结构的材料,所得结构具有理想的低k值。复合介电层可以与孔隙率,尺寸和材料特性不同的其他介电层一起使用,以提供变化的机械和电气性能曲线。

著录项

  • 公开/公告号US2005179140A1

    专利类型

  • 公开/公告日2005-08-18

    原文格式PDF

  • 申请/专利权人 MICHAEL D. GOODNER;JIHPERNG LEU;

    申请/专利号US20050106929

  • 发明设计人 MICHAEL D. GOODNER;JIHPERNG LEU;

    申请日2005-04-14

  • 分类号H01L29/40;

  • 国家 US

  • 入库时间 2022-08-21 22:25:52

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