Process for generating a hard mask for the patterning of a layer, and hard mask for the patterning of a layer

摘要

A process for generating a hard mask for the patterning of a first layer includes applying a second layer, which includes carbon, to the first layer that is to be patterned. A third layer, which includes silicon and carbon, is spun onto the second layer and an organic antireflection coating layer is applied to the spun-on third layer.