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Reducing outgassing of reactive material upon exposure of photolithography resists
Reducing outgassing of reactive material upon exposure of photolithography resists
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机译:减少光刻胶曝光后反应材料的放气
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摘要
Outgassing of reactive material upon exposure of a photolithographic resist may be reduced. Outgassing may foul optical components of the photolithographic system. In one embodiment, a ring compound with iodine or sulfur may be formed. The ring compound may be more resistant to the generation of reactive outgassing components.
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