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Semiconductor device, cutting equipment for cutting semiconductor device, and method for cutting the same

机译:半导体器件,用于切割半导体器件的切割设备及其切割方法

摘要

A method for cutting a semiconductor device is provided. The device includes a first semiconductor layer, an insulation layer, and a second semiconductor layer. The method includes the steps of: forming a semiconductor part in the first semiconductor layer; irradiating a laser beam on a surface of the first semiconductor layer; and cutting the device into a semiconductor chip by using the laser beam. The laser beam is reflected at an interface so that a first reflected beam is generated, and the laser beam is reflected at another interface so that a second reflected beam is generated. The insulation film has a thickness, which is determined to weaken the first and second reflected beams each other.
机译:提供了一种用于切割半导体器件的方法。该器件包括第一半导体层,绝缘层和第二半导体层。该方法包括以下步骤:在第一半导体层中形成半导体部件;以及在第一半导体层中形成半导体部件。在第一半导体层的表面上照射激光束;利用激光束将器件切割成半导体芯片。激光束在界面处反射,从而产生第一反射光束,并且激光束在另一界面处反射,从而产生第二反射光束。绝缘膜具有确定为使第一反射光束和第二反射光束彼此减弱的厚度。

著录项

  • 公开/公告号US2005082644A1

    专利类型

  • 公开/公告日2005-04-21

    原文格式PDF

  • 申请/专利权人 MAKOTO OHKAWA;

    申请/专利号US20040952782

  • 发明设计人 MAKOTO OHKAWA;

    申请日2004-09-30

  • 分类号H01L29/04;

  • 国家 US

  • 入库时间 2022-08-21 22:24:29

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