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Semiconductor memory device capable of accurate and stable operation

机译:能够精确稳定运行的半导体存储器件

摘要

An external clock generating circuit generates a mode indicating signal at the “H” level and generates an external clock signal synchronized with a write command buffer signal, when a semiconductor memory device is not in an internal operation mode. When the semiconductor memory device enters an internal operation mode and the mode indicating signal makes a transition from “H” to “L”, the external clock signal is fixed at the “L” level. The external clock signal is not supplied to an external CUI, and the external CUI is set in a state in which reception of any external command is prohibited. Until the end of asynchronous reset, the mode indicating signal is kept at the “L” level, and thereafter raised to the “H” level, so that malfunction caused by an input of an external command during asynchronous reset period can be avoided.
机译:当半导体存储装置不处于内部操作模式时,外部时钟产生电路产生处于“ H”电平的模式指示信号,并产生与写命令缓冲器信号同步的外部时钟信号。当半导体存储器件进入内部操作模式并且模式指示信号从“ H”转变为“ L”时,外部时钟信号被固定为“ L”电平。外部时钟信号不提供给外部CUI,并且外部CUI设置为禁止接收任何外部命令的状态。在异步复位结束之前,将模式指示信号保持在“ L”电平,然后升高到“ H”电平,从而可以避免在异步复位期间由于外部命令的输入而引起的故障。

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