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Growth and integration of epitaxial gallium nitride films with silicon-based devices
Growth and integration of epitaxial gallium nitride films with silicon-based devices
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机译:外延氮化镓膜与硅基器件的生长和集成
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摘要
Epitaxial gallium nitride is grown on a silicon substrate while reducing or suppressing the formation of a buffer layer. The gallium nitride may be grown directly on the silicon substrate, for example using domain epitaxy. Alternatively, less than one complete monolayer of silicon nitride may be formed between the silicon and the gallium nitride. Subsequent to formation of the gallium nitride, an interfacial layer of silicon nitride may be formed between the silicon and the gallium nitride.
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