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Combination field programmable gate array allowing dynamic reprogrammability and non-volatile programmability based upon transistor gate oxide breakdown
Combination field programmable gate array allowing dynamic reprogrammability and non-volatile programmability based upon transistor gate oxide breakdown
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机译:结合现场可编程门阵列,可基于晶体管栅极氧化层击穿实现动态重编程和非易失性可编程
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摘要
A cell that can be used as a dynamic memory cell for storing data or a field programmable gate array (FPGA) cell for programming is disclosed. The cell includes a capacitor having a first terminal connected to a column bitline and a second terminal connected to a switch control node. A select transistor has a gate connected to the read bitline, a source connected to the switch control node, and a drain connected to a row wordline. The switch control node stores data as a voltage indicative of a one or a zero.
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