Silicided trench gate power mosfets ultrasonically bonded to a surface source electrode

摘要

A semiconductor device comprising a semiconductor substrate having first and second surfaces opposing each other, the substrate including a plurality of cells sharing a common drain region, each of the cells having source and gate regions, a surface source electrode connected to the source region of each of the cells and provided on the first surface, a strap member coupled with the surface source electrode by ultrasonic waves, a gate polysilicon wiring layer connecting the gate region of each of the cells and having a silicide layer in at least a portion of a surface thereof, a surface gate electrode connected to the gate polysilicon wiring layer and provided on the first surface, and a drain electrode provided on the second surface and shared by the cells.