Integrated circuit transistor body bias regulation circuit and method for low voltage applications

摘要

An integrated circuit transistor body bias regulation circuit and method of especial applicability with respect to low voltage applications wherein the threshold voltage (V_t) of certain transistors is lowered at low power supply voltage (VCC) levels, low temperature and/or high V_t process conditions to assure adequate transistor drive but may also be raised at high VCC levels, high temperature and/or low V_t process conditions to reduce leakage current. In this manner, circuit speed that is closer to constant (versus VCC, temperature and process variation) is thereby achieved.