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DETECTING EROSION IN COLLECTOR OPTICS WITH PLASMA SOURCES IN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY SYSTEMS
DETECTING EROSION IN COLLECTOR OPTICS WITH PLASMA SOURCES IN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY SYSTEMS
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机译:用极端紫外线(EUV)光刻系统检测带有等离子体源的集合光学中的腐蚀
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摘要
An embodiment of the present invention includes a technique to detect erosion in an extreme ultra violet (EVU) source collector system. An initial impedance and a coating impedance of a muli-layer (ML) coating of the collector in one of an extreme ultra violet lithography (EUVL) stepper and an optical system are obtained at first and second time insists. A relation between the coating and initial impedances is generated. An erosion rate of the ML coating is determined based on the relation.
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