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Semiconductor integrated circuit device and the process of manufacturing the same for reducing the size of a memory cell by making the width of a bit line than a predetermined minimum size
Semiconductor integrated circuit device and the process of manufacturing the same for reducing the size of a memory cell by making the width of a bit line than a predetermined minimum size
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机译:半导体集成电路器件及其制造工艺,用于通过使位线的宽度小于预定的最小尺寸来减小存储单元的尺寸
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摘要
A memory cell of a DRAM is reduced in size by making the width of a bit line finer than the minimum size determined by the limit of resolution of a photolithography. The bit line is made fine by forming a silicon oxide film on the inside wall of a wiring trench formed in a silicon oxide film and by forming the bit line inside the silicon oxide film. The silicon oxide film formed in the trench is deposited so that the silicon oxide film has a thickness thinner than half the width of the wiring trench and in the fine gap inside the silicon oxide film is buried a metal film to be the material of the bit line.
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