Method of fabricating bottom-gated polycrystalline silicon thin film transistor

摘要

A method of forming a thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an amorphous silicon layer on the gate insulating layer, crystallizing the amorphous silicon layer within an active region corresponding to the gate electrode to form a polycrystalline silicon layer, etching the amorphous silicon layer such that an etch rate of amorphous silicon is greater than an etch rate of polycrystalline silicon to form a semiconductor layer of polycrystalline silicon in the active region, and forming source and drain electrodes on the semiconductor layer.