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System, method and medium for modeling, monitoring and/or controlling plasma based semiconductor manufacturing processes

机译:用于建模,监视和/或控制基于等离子体的半导体制造过程的系统,方法和介质

摘要

A method, system, and medium of spectroscopically modeling and/or controlling a semiconductor manufacturing process. The modeling/controlling includes the steps of conducting a plurality of semiconductor manufacturing process runs by changing at least one of process parameters from its target value, and collecting spectral data indicative of the light emitted by plasma during each of said semiconductor manufacturing process runs. The modeling/controlling also includes the step of formulating a ratio based on a relationship between the collected spectral data and the changes in the at least one of the plurality of process parameters.
机译:一种光谱地建模和/或控制半导体制造过程的方法,系统和介质。建模/控制包括以下步骤:通过从其目标值改变过程参数中的至少一个来进行多个半导体制造过程运行,并且收集指示在每个所述半导体制造过程运行期间由等离子体发射的光的光谱数据。建模/控制还包括以下步骤:基于所收集的光谱数据与多个过程参数中的至少一个的变化之间的关系来制定比率。

著录项

  • 公开/公告号US6943053B2

    专利类型

  • 公开/公告日2005-09-13

    原文格式PDF

  • 申请/专利权人 HAKEEM M. OLUSEYI;

    申请/专利号US20020101215

  • 发明设计人 HAKEEM M. OLUSEYI;

    申请日2002-03-20

  • 分类号H01L21/00;

  • 国家 US

  • 入库时间 2022-08-21 22:20:57

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