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Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact
Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact
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机译:永久在使用具有埋入式接触的双多晶硅层CMOS工艺实现的晶体管上
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摘要
A permanently-ON MOS transistor comprises silicon source and drain regions of a first conductivity type in a silicon well region of a second conductivity type. A silicon contact region of the first conductivity types is buried in the well region, said contact region contacting said source region and said drain region. A first gate insulating layer is selectively placed over the silicon source and drain regions. A second gate insulating layer is selectively placed over the first gate insulating layer and over the silicon contact region. A polysilicon gate region is placed over the second gate insulating layer.
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