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Catalyst-free growth of single-wall carbon nanotubes
Catalyst-free growth of single-wall carbon nanotubes
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机译:单壁碳纳米管的无催化剂生长
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摘要
A method for growing single-walled nanotubes comprises providing a silicon carbide semiconductor wafer comprising a silicon face and a carbon face, and annealing the silicon carbide semiconductor wafer in a vacuum at a temperature of at least about 1300 degrees Celsius, inducing formation of single wall carbon nanotubes on the silicon face.
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