Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells

摘要

A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×10²⁰ dopant atoms per cm³ of silicon.