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Increasing stress-enhanced drive current in a MOS transistor
Increasing stress-enhanced drive current in a MOS transistor
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机译:增加MOS晶体管中应力增强的驱动电流
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摘要
An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.
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