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Gas heating apparatus for chemical vapor deposition process and semiconductor device fabrication method using same
Gas heating apparatus for chemical vapor deposition process and semiconductor device fabrication method using same
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机译:用于化学气相沉积工艺的气体加热装置和使用该气体加热装置的半导体器件制造方法
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摘要
The present invention provides a gas heating apparatus that activates reaction gases for a chemical vapor deposition. The gas heating apparatus includes a chamber becoming enclosures of the gas heating apparatus; a heat insulating material 20 formed on an inner surface of the chamber so as to thermally insulate the inside of the chamber from the outside; a quartz tube having a gas inflow pipe, a gas outflow pipe, enlarged-pipe portions and abridged-pipe portion, wherein the enlarged-pipe portions and the abridged-pipe portions are alternately repeated and constitute a zigzag shape in an up-and-down direction in the chamber; a plurality of ceramic balls located inside the enlarged-pipe portions of the quartz tube; and a heater having a shape of coil spring and surrounding the zigzag shape of the quartz tube in the chamber.
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