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Capacitor structure and automated design flow for incorporating same

机译:电容器结构及其自动设计流程

摘要

A capacitive structure is described that comprises a first node and a second node. The first node comprises a first pair of vertically aligned strips that are electrically connected with one or more vias and a second pair of vertically aligned strips that are electrically connected with one or more vias. The higher strips of both of the pairs are at a same metal level and the lower strips of both of the pairs are at a same lower metal level. The second node comprises, at the metal level, a first metal structure having a pair of windows. A first of the windows surround and are isolated from a first of the higher strips. A second of the windows surround and are isolated from a second of the higher strips. The second node also comprises, at the lower metal level, a second metal structure having a pair of windows. A first of the windows surround and are isolated from a first of the lower strips. A second of the windows surround and are isolated from a second of the lower strips. The first and second metal structures are electrically connected with one or more vias.
机译:描述了一种包括第一节点和第二节点的电容结构。第一节点包括与一个或多个通孔电连接的第一对垂直对准的带和与一个或多个通孔电连接的第二对垂直对准的带。这两对的较高的带处于相同的金属水平,而两对的较低的带处于相同的较低金属水平。在金属层,第二节点包括具有一对窗口的第一金属结构。窗中的第一个包围并与较高的第一个隔离。第二个窗口围绕第二个较高的条并与之隔离。第二节点在较低的金属层还包括具有一对窗口的第二金属结构。窗中的第一个围绕并与下条中的第一个隔离。第二个窗口围绕第二个下部条并与之隔离。第一金属结构和第二金属结构与一个或多个通孔电连接。

著录项

  • 公开/公告号US6963122B1

    专利类型

  • 公开/公告日2005-11-08

    原文格式PDF

  • 申请/专利权人 ERIC SOENEN;DAN BUI;

    申请/专利号US20030656793

  • 发明设计人 ERIC SOENEN;DAN BUI;

    申请日2003-09-05

  • 分类号H01L29/00;

  • 国家 US

  • 入库时间 2022-08-21 22:19:59

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