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Methods for fabricating a triple-gate MOSFET transistor
Methods for fabricating a triple-gate MOSFET transistor
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机译:三栅极MOSFET晶体管的制造方法
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摘要
Fabrication methods are presented in which a semiconductor body is deposited in a cavity of a temporary form structure above a semiconductor starting structure. The formed semiconductor body can be epitaxial silicon deposited in the form cavity over a silicon substrate, and includes three body portions, two of which are doped to form source/drains, and the other forming a transistor channel that overlies the starting structure. A gate structure is formed along one or more sides of the channel body portion to create a MOS transistor.
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