首页> 外国专利> Magnetic differential field sensor using hysteresis field in AMR films

Magnetic differential field sensor using hysteresis field in AMR films

机译:利用AMR薄膜中的磁滞场的磁差场传感器

摘要

A method and system for detecting a magnetic field utilizing a magnetoresistor of a magnetic sensor is disclosed. A normalized magnetoresistance associated with the magnetoresistor can be calculated such that the magnetoresistor comprises an initial magnetization direction thereof. The magnetic field is generally permitted to exceed an ability of the magnetoresistor to remain pointed in the initial magnetization direction, thereby enabling the magnetoresistor to experience a magnetization reversal thereof. The normalized resistance can be placed into a new state in response to the magnetization reversal thereof, thereby permitting the normalized resistance to be utilized as a switch thereof and allowing the magnetic sensor to detect changes in the magnetic field associated with the magnetoresistor.
机译:公开了一种利用磁传感器的磁阻检测磁场的方法和系统。可以计算与磁阻相关的归一化磁阻,使得磁阻包括其初始磁化方向。通常允许磁场超过磁阻在初始磁化方向上保持指向的能力,从而使磁阻经历其磁化反转。归一化电阻可以响应于其磁化反转而被置于新的状态,从而允许将归一化电阻用作其开关,并且允许磁传感器检测与磁阻相关的磁场的变化。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号